Comparison of the Proposed Device with Conventional Gate All around Tunnel Field Effect Transistor Gaa-tfet
نویسندگان
چکیده
In this paper, we propose and validate a Heterogate DielectricDual Material Gate-Gate All Around, Tunnel Field Effect Transistor (HD-DMG-GAA-TFET). A comparative study for different values of high-k has been done, and it has been clearly shown that the problem of lower ION (which hinders the circuit performance of TFET) can be overcome by using the dielectric engineered hetero-gate architecture. The HD-DMG-GAA-TFET shows an enhanced ION of the order of 10 -4 A and an ION/IOFF of the order of 10 12 (approximately). The perfect saturation of drain current is obtained and hence the device is a worthy candidate for sub nanometre range, for low power analog application. Further, the comparison of the proposed device with conventional Gate All Around Tunnel Field Effect Transistor (GAA-TFET), has been done and it has been found that the proposed device has greater tunneling current driving capacity. KeywordsAmbipolarity, ATLAS-3D, band to band tunneling (BTBT), barrier width, heterogate dielectric, high-k, subthreshold swing (SS), TFET (tunneling field effect transistor).
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